2005. 6. 1 1/2 semiconductor technical data kdv301e revision no : 0 tv tuning. features high capacitance ratio : c 2v /c 25v =14.5(min.) low series resistance : r s =1.1 (max.) small package : esc. maximum rating (ta=25 ) esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e 1. anode 2. cathode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) variable capacitance diode silicon epitaxial planar diode type name marking q v characteristic symbol rating unit reverse voltage v r 32 v junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit reverse current i r1 v r =30v - - 10 na i r2 v r =30v, ta=60 - - 100 capacitance c 2v v r =2v, f=1mhz 39.5 - 47.4 pf c 25v v r =25v, f=1mhz 2.60 - 3.03 capacitance ratio c 2v /c 25v - 14.5 - - series resistance r s v r =5v, f=470mhz - - 1.1 c(max.)-c(min.) 0.02 c(min.) (v r =2~25v) note : available in matched group for capacitance to 2.0%.
2005. 6. 1 2/2 revision no : 0 kdv301e 1 0.5 10 30 0 10 30 10 30 c r - v r 0 10 9 20 40 10 13 10 12 10 11 10 10 reverse voltage v r (v) reverse voltage v r (v) reverse voltage v r (v) reverse current i r ( a ) total capacttance c t (pf ) 40 50 60 20 1 0.5 10 30 0 0.2 0.6 0.8 1.0 1.2 0.4 r s - v r series resistance r s ( ? ) i r - v r f = 1mhz f = 470mhz
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